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CFP8N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - CRE

भाग संख्या CFP8N80
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स CRE 
लोगो CRE लोगो 
पूर्व दर्शन
1 Page
		
<?=CFP8N80?> डेटा पत्रक पीडीएफ

CFP8N80 pdf
Storage Temperature
Drain current limited by maximum junction temperature.
Thermal Characteristics
Parameter
Thermal Resistance Junction-Ambient
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
CFF/P8N80
TSTG
-55~+150
Symbol
RthJA
RthCS
RthJC
Ratings
TO-220
TO-220F
62.5
0.5 --
0.75 2.25
Units
/W
Electrical CharacteristicsTJ=25,unless Otherwise specified.
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Forward
Current
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Test Conditions Min Typ Max Units
BVDSS
VGS=0V,ID=250μA
800
--
--
V
VDS=800V,VGS=0V
--
--
10 μA
IDSS
VDS=640V,TC=125
--
-- 100 μA
VGS=30V,VDS=0V -- -- 100 nA
IGSS
VGS=-30V,VDS=0V
--
-- -100 nA
BVDSS/TJ
ID=250μA
-- 0.93 -- V/
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VSD
ISD
ISM
tRR
QRR
VDS=VGS, ID=250μA
3.0
--
5.0
V
VGS=10V,ID=3.9A
-- 1.57 1.75 Ω
VDS=25V,VGS=0V,
f=1MHZ
-- 1290 1680 pF
-- 120 155 pF
-- 10 13 pF
VDD=400V,ID=7.8A,
RG=25Ω
(Note 4, 5)
VDS=640V, ID=7.8A
VGS=10V
(Note 4, 5)
--
--
--
--
--
--
--
35 80
100 210
50 110
60 130
27 35
8.2 --
11 --
ns
ns
ns
ns
nC
nC
nC
VGS=0V,ISD=7.8A
ISD=7.8A,
dISD/dt=100A/μs
(Note 4)
--
--
--
--
--
-- 1.4
-- 7.8
-- 26.4
650 --
7.0 --
V
A
A
ns
μC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=25 mH, IAS = 7.8A, VDD = 50V, RG=25Ω,Starting TJ=25°C
3. ISD7.8 A, di/dt 200A/μs, VDDBVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width 300μs, Duty cycle2%
5. Essentially independent of operating temperature
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
2

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डाउनलोड[ CFP8N80 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CFP8N80N-Channel MOSFETCRE
CRE


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