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FX854 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DC-DC Converter Applications - Sanyo Semicon Device

भाग संख्या FX854
समारोह DC-DC Converter Applications
मैन्युफैक्चरर्स Sanyo Semicon Device 
लोगो Sanyo Semicon Device लोगो 
पूर्व दर्शन
1 Page
		
<?=FX854?> डेटा पत्रक पीडीएफ

FX854 pdf
FX854
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter
[MOSFET]
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
VDS=–60V, VGS=0
VGS=±12V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–500mA
ID=–500mA, VGS=–10V
ID=–500mA, VGS=–4V
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–1A, VGS=0
VR
VF
IR
C
trr
Rthj-a
IR=200µA
IF=500mA
VR=25V
VR=10V, f=1MHz Cycle
IF=IR=100mA, See specified Test CIrcuit
Mounted on ceramic board (750mm2×0.8mm)
Ratings
min typ max
Unit
–60 V
–100 µA
±10 µA
–1.0 –2.0 V
0.6 1.0
S
0.9 1.2
1.2 1.6
160 pF
60 pF
10 pF
10 ns
13 ns
70 ns
30 ns
–0.9 V
50 V
0.55 V
50 µA
18 pF
10 ns
100 ˚C/W
Switching Time Test CIrcuit [MOSFET] Trr Test Circuit [SBD]
No.4894-2/4

विन्यास 4 पेज
डाउनलोड[ FX854 Datasheet.PDF ]


शेयर लिंक


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