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UPA1816 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOS FIELD EFFECT TRANSISTOR - NEC

भाग संख्या UPA1816
समारोह MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA1816?> डेटा पत्रक पीडीएफ

UPA1816 pdf
µ PA1816
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
VDS = 12 V, VGS = 0 V
VGS = m 8.0 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID = 4.5 A
VGS = 4.0 V, ID = 4.5 A
VGS = 2.5 V, ID = 4.5 A
VGS = 1.8 V, ID = 2.5 A
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Crss f = 1.0 MHz
td(on) VDD = 10 V, ID = 4.5 A
tr VGS = 4.0 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tf
QG VDD = 10 V
QGS VGS = 4.0 V
QGD ID = 9.0 A
Body Diode Forward Voltage
VF(S-D) IF = 9.0 A, VGS = 0 V
Reverse Recovery Time
trr IF = 9.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/ µs
MIN. TYP. MAX. UNIT
0.45 0.75
1.0
m 10
1.5
µA
µA
V
11 22
S
12.0 15 m
12.5 16 m
16.2 22.5 m
23.7 41.5 m
1570
pF
400 pF
240 pF
16 ns
132 ns
223 ns
295 ns
15 nC
3.0 nC
4.5 nC
0.82 V
490 ns
580 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS ()
VGS
Wave Form
10%
0
90%
VGS
VDS ()
90%
VDS
VDS
Wave Form
0
td(on)
10% 10%
tr td(off)
90%
tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet G16252EJ1V0DS

विन्यास 6 पेज
डाउनलोड[ UPA1816 Datasheet.PDF ]


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