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ELM13401CA-S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single P-channel MOSFET - ELM Technology Corporation

भाग संख्या ELM13401CA-S
समारोह Single P-channel MOSFET
मैन्युफैक्चरर्स ELM Technology Corporation 
लोगो ELM Technology Corporation लोगो 
पूर्व दर्शन
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ELM13401CA-S pdf
Single P-channel MOSFET
ELM13401CA-S
■Electrical characteristics
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Condition
Min. Typ. Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
-30
V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Ta=55°C
-1
μA
-5
Gate-body leakage current
Igss Vds=0V, Vgs=±12V
±100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-0.7 -1.0 -1.3 V
On state drain current
Id(on) Vgs=-4.5V, Vds=-5V
-25
A
Static drain-source on-resistance
Vgs=-10V
Id=-4.2A
Ta=125°C
Rds(on)
Vgs=-4.5V, Id=-4A
42 50
75
53 65 mΩ
Vgs=-2.5V, Id=-1A
80 120 mΩ
Forward transconductance
Gfs Vds=-5V, Id=-5A
7 11
S
Diode forward voltage
Vsd Is=-1A, Vgs=0V
-0.75 -1.00 V
Max. body-diode continuous current Is
-2.2 A
DYNAMIC PARAMETERS
Input capacitance
Ciss
954 pF
Output capacitance
Coss Vgs=0V, Vds=-15V, f=1MHz
115 pF
Reverse transfer capacitance
Crss
77 pF
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Vgs=-4.5V, Vds=-15V
Qgs
Id=-4A
Qgd
9.4 nC
2.0 nC
3.0 nC
Turn-on delay time
td(on)
6.3 ns
Turn-on rise time
tr Vgs=-10V, Vds=-15V
3.2 ns
Turn-off delay time
td(off) RL=3.6Ω, Rgen=6Ω
38.2 ns
Turn-off fall time
tf
12.0 ns
Body diode reverse recovery time
trr If=-4A, dIf/dt=100A/μs
20.2 ns
Body diode reverse recovery charge Qrr If=-4A, dIf/dt=100A/μs
11.2 nC
NOTE :
1.The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2.Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4- 2

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भाग संख्याविवरणविनिर्माण
ELM13401CA-SSingle P-channel MOSFETELM Technology Corporation
ELM Technology Corporation


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