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HER308G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (HER301G - HER308G) 3.0A Leaded Type High Effciency Rectifiers - American First Semiconductor

भाग संख्या HER308G
समारोह (HER301G - HER308G) 3.0A Leaded Type High Effciency Rectifiers
मैन्युफैक्चरर्स American First Semiconductor 
लोगो American First Semiconductor लोगो 
पूर्व दर्शन
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HER308G pdf
HER301G THRU HER308G
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
3.0
2.5
2.0
1.5
1.0
0.5
single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150
Ambient Temperature, TA ( °C)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
200
8.3mS single half sine-wave
(JEDEC Method)
150
100
50
0
12
5 10 20
50 100
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneour Forward
Characteristics
100
T J= 2 5°C HER301G-HER304G
HER306G-HER308G
10
HER305G
1.0
0.1
0.4 0.6 0.8
p u l s e w i d t h = 3 0 0μS
1% duty cycle
1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage, VF (Volts)
Fig. 4 - Typical Reverse Characteristics
1000
TJ=125°C
100
10
TJ=25°C
1.0
0.1
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
HER301G-HER305G
100
10 HER306G-HER308G
1
0.1 1.0
TJ=25°C
f=1.0MHz
Vsig=50mVp-p
10 100
Reverse Voltage, VR (Volts)
Fig. 6 - Test Circuit Diagram and Reverse
Recovery Time Characteristic
50Ω
noninductive
10Ω
noninductive
Trr
0.5A
+
25Vdc
(approx)
-
1Ω
non
inductive
-
pulse
generator
(note 2)
oscilloscope
(note 1)
+
0
-0.25A
-1.0A
0
5 10 15 20 25 30
time, t(nS)
Note: 1. rise time=7nS Max. input impedance=1MΩ, 22pF
2. rise time=10nS Max. source impedance=80Ω
www.First-semi.com
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