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DMN2600UFB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 25V N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2600UFB
समारोह 25V N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMN2600UFB?> डेटा पत्रक पीडीएफ

DMN2600UFB pdf
DMN2600UFB
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Steady
State
Pulsed Drain Current
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
Value
25
±8
1.3
0.9
3.0
Unit
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.54
234
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
25
-
-
0.45
Typ
-
-
-
-
Static Drain-Source On-Resistance
RDS (ON)
-
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
40 -
--
- 70.13
- 7.56
- 5.59
- 72.3
- 0.85
- 0.16
- 0.11
- 4.1
- 11.5
- 34.8
- 20.9
Notes:
4. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
Max
-
1
10
1.0
350
450
600
-
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 25V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 200mA
mΩ VGS = 2.5V, ID = 100mA
VGS = 1.8V, ID = 75mA
mS VDS = 3V, ID = 200mA
V VGS = 0V, IS = 300mA
pF
pF VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS =0V, VGS = 0V, f = 1MHz
nC
nC VGS = 4.5V, VDS = 15V,
nC ID = 1A
ns
ns VDS = 15V, RL=15Ω
ns VGS = 10V, RG = 6Ω
ns
DMN2600UFB
Document number: DS31983 Rev. 4 - 2
2 of 6
www.diodes.com
March 2011
© Diodes Incorporated

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डाउनलोड[ DMN2600UFB Datasheet.PDF ]


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