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DMN2013UFDE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20V N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2013UFDE
समारोह 20V N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN2013UFDE pdf
DMN2013UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = 4.5V
Continuous Drain Current (Note 7) VGS = 2.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Steady
State
t < 10s
Steady
State
t <1 0s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
Value
20
±8
10.5
8.5
12.5
10.0
9.4
7.5
11.2
8.8
80
2.5
Units
V
V
A
A
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.66
0.42
189
132
2.03
1.31
61
43
9.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
20
0.5
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ
8.4
9.8
12
15
10
2453
275
257
1.2
14.3
25.8
1.8
2.1
9.9
24.5
66.4
20.8
Max
1
±2
1.1
11
13
30
50
1.2
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 16V, VGS = 0V
µA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.5A
m
VGS = 2.5V, ID = 8.5A
VGS = 1.8V, ID = 1A
VGS = 1.5V, ID = 0.5A
S VDS = 5V, ID = 4A
V VGS = 0V, IS = 8.5A
pF
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VDS = 10V, ID = 8.5A
nC
ns
ns VDS = 10V, ID = 8.5A
ns VGS = 4.5V, RG = 1.8
ns
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
2 of 6
www.diodes.com
April 2013
© Diodes Incorporated

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