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HAT3008RJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N/P Channel Power MOS FET High Speed Power Switching - Hitachi Semiconductor

भाग संख्या HAT3008RJ
समारोह Silicon N/P Channel Power MOS FET High Speed Power Switching
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=HAT3008RJ?> डेटा पत्रक पीडीएफ

HAT3008RJ pdf
HAT3008R/HAT3008RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch Pch
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode
reverse drain current
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
60 – 60 V
±20 ± 20 V
5
– 3.5
A
40 – 28 A
5
– 3.5
A
Avalanche current
HAT3008R
I Note4
AP
HAT3008RJ
—— —
5
– 3.5
A
Avalanche energy
HAT3008R
E Note4
AR
HAT3008RJ
—— —
2.14 1.05 mJ
Channel dissipation
Pch Note2 2 2 W
Channel dissipation
Pch Note3 3 3 W
Channel temperature
Tch 150 150 °C
Storage temperature
Tstg – 55 to + 150 –55 to + 150 °C
Note:
1. PW 10µs, duty cycle 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
4. Value at Tch=25°C, Rg50
2

विन्यास 15 पेज
डाउनलोड[ HAT3008RJ Datasheet.PDF ]


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