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WT7822AM डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Surface Mount N-Channel Enhancement Mode MOSFET - Weitron Technology

भाग संख्या WT7822AM
समारोह Surface Mount N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Weitron Technology 
लोगो Weitron Technology लोगो 
पूर्व दर्शन
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<?=WT7822AM?> डेटा पत्रक पीडीएफ

WT7822AM pdf
WT7822AM
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Static (2)
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
Gate-Source Threshold Voltage
VDS=VGS, ID=250µA
Gate-Source Leakage Current
VDS=0V, VGS=-+16V
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
Drain-Source On-Resistance
VGS=10V, ID=14A
VGS=4.5V, ID=10A
On-State Drain Current
VDS=10V, VGS=10V
Forward Transconductance
VDS=10V, ID=14A
Dynamic(3)
Input Capacitance
VDS=16V, VGS=0V, f=1MHZ
Output Capacitance
VDS=16V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=16V, VGS=0V, f=1MHZ
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
rDS (on)
ID(on)
gfs
Min
25
0.7
-
-
-
-
10
-
Typ
-
1.2
-
-
6
8
-
28
Ciss
Coss
Crss
-
-
-
3640
550
420
Switching (3)
Turn-On Delay Time
VGS =5V,VDD =16V, ID=14A, RGEN=6
td(on)
Rise Time
VGS =5V,VDD =16V, ID=14A, RGEN=6
tr
Turn-Off Time
VGS =5V,VDD =16V, ID=14A, RGEN=6
td(off )
Fall Time
VGS =5V,VDD =16V, ID=14A, RGEN=6
tf
Total Gate Charge
VGS=10V,VDS=16V,ID=14A
VGS=5V,VDS=16V,ID=14A
Qg
Gate-Source Charge
VGS=5V, VDS=16V, ID=14A
Qgs
Gate-Drain Charge
VGS=5V, VDS=16V, ID=14A
Qgd
Drain-Source Diode Forward Voltage
VGS=0V, IS=14A
Note: 1. Surface Mounted on FR4 Board t <_ 10sec.
2. Pulse Test : PW<_ 300us, Duty Cycle <_ 2%.
VSD
3. Guaranteed by Design, not Subject to Production Testing.
4. Guaranteed when external Rg=6Ω and tf < tf max.
-
-
-
-
-
-
-
-
-
12.3
10.2
23.8
12.1
73.9
36.2
11.2
9.9
0.84
WEITRON
http://www.weitron.com.tw
2/6
Max
-
2.0
-+100
1
7
9
-
-
Unit
V
V
nA
uA
m
A
S
-
- PF
-
- nS
- nS
- nS
- nS
- nc
-
- nc
- nc
1.2 V
02-Aug-05

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डाउनलोड[ WT7822AM Datasheet.PDF ]


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WT7822AMSurface Mount N-Channel Enhancement Mode MOSFETWeitron Technology
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