DataSheet.in

FDMC6296 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single N-Channel Logic-Level Power Trench MOSFET - Fairchild Semiconductor

भाग संख्या FDMC6296
समारोह Single N-Channel Logic-Level Power Trench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMC6296?> डेटा पत्रक पीडीएफ

FDMC6296 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30 V
26 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA1
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 11.5 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 11.5 A, TJ = 125 °C
VDD = 5 V, ID = 11.5 A
1.8 3 V
-6 mV/°C
8.7 10.5
10.6 15 mΩ
13 17
49 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
VGS = 0 V, f = 1 MHz
1610
406
150
0.9
2141
540
225
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 5V
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 1.0 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 5 V
VDD = 15 V,
ID = 11.5 A
10 20 ns
31 0 ns
27 43 ns
81 6 ns
14 19 nC
4n C
4 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
(Note 2)
0.7 1.2 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 11.5 A, di/dt = 100 A/μs
30
22
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 ° C/W wh en mo unted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
2
www.fairchildsemi.com

विन्यास 7 पेज
डाउनलोड[ FDMC6296 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDMC6296Single N-Channel Logic-Level Power Trench MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English