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W7NK90Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STW7NK90Z - STMicroelectronics

भाग संख्या W7NK90Z
समारोह STW7NK90Z
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=W7NK90Z?> डेटा पत्रक पीडीएफ

W7NK90Z pdf
STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS =0 )
VDGR
Drain-gate Voltage (RGS =2 0k )
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Viso Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 5.8A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
Value
TO-220/D2PAK/TO247
900
900
± 30
5.8
3.65
23.2
140
1.12
4000
4.5
--
-55 to 150
TO220FP
5.8 (*)
3.65 (*)
23.2 (*)
30
0.24
2500
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
THERMAL DATA
Rthj-case
Rthj-pcb
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
D2PAK
0.89
60
TO-220FP TO-247
4.2 0.89
Unit
°C/W
°C/W
62.5
300
50 °C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =I AR,V DD =5 0 V)
Max Value
5.8
300
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13

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भाग संख्याविवरणविनिर्माण
W7NK90ZSTW7NK90ZSTMicroelectronics
STMicroelectronics


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