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D45H11E3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low Vcesat PNP Epitaxial Planar Transistor - CYStech Electronics

भाग संख्या D45H11E3
समारोह Low Vcesat PNP Epitaxial Planar Transistor
मैन्युफैक्चरर्स CYStech Electronics 
लोगो CYStech Electronics लोगो 
पूर्व दर्शन
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<?=D45H11E3?> डेटा पत्रक पीडीएफ

D45H11E3 pdf
CYStech Electronics Corp.
Spec. No. : C607E3
Issued Date : 2007.03.07
Revised Date : 2014.03.03
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw380μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
-80
-80
-5
-10
-20 (Note 1)
2
50
62.5
2.5
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCEO(SUS)
ICEO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
Min.
-80
-
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-0.6
-1.0
-
-
40
230
Max.
-
-10
-10
-50
-1.0
-1.5
-
-
-
-
Unit
V
μA
μA
μA
V
V
-
-
MHz
pF
Test Conditions
IC=-30mA, IB=0
VCE=-80V, IB=0
VCE=-80V, VBE=0
VEB=-5V, IC=0
IC=-8A, IB=-0.4A
IC=-8A, IB=-0.8A
VCE=-1V, IC=-2A
VCE=-1V, IC=-4A
VCE=-10V, IC=-500mA, f=20MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
D45H11E3
CYStek Product Specification

विन्यास 5 पेज
डाउनलोड[ D45H11E3 Datasheet.PDF ]


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D45H11E3Low Vcesat PNP Epitaxial Planar TransistorCYStech Electronics
CYStech Electronics


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