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2N3906 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Transistor - NTE

भाग संख्या 2N3906
समारोह Silicon PNP Transistor
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=2N3906?> डेटा पत्रक पीडीएफ

2N3906 pdf
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
SmallSignal Characteristics
VCE(sat)
VBE(sat)
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
− − 0.25
− − 0.4
0.65 0.85
− − 0.95
V
V
V
V
Current GainBandwidth Product
2N3905
2N3906
fT IC = 10mA, VCE = 20V, f = 100MHz 200 − − MHz
250 − − MHz
Output Capacitance
Input Capacitance
Input Impedance
2N3905
2N3906
Cobo
Cibo
hie
VCB = 5V, IE = 0, f = 1MHz
VCB = 0.5V, IC = 0, f = 100kHz
IC = 1mA, VCE = 10V, f = 1kHz
− − 4.5 pF
− − 10.0 pF
0.5 8.0
2.0 12
k3
k3
Voltage Feedback Ratio
2N3905
2N3906
hre IC = 1mA, VCE = 10V, f = 1kHz
0.1 5.0 x 104
0.1 10 x 104
SmallSignal Current Gain
2N3905
2N3906
hfe IC = 1mA, VCE = 10V, f = 1kHz
50 200
100 400
Output Admittance
2N3905
2N3906
hoe IC = 1mA, VCE = 10V, f = 1kHz
1.0 40 5 mhos
3.0 60 5 mhos
Noise Figure
2N3905
NF IfC==101H00z5tAo,1V5C.7Ek=Hz5V, RS = 1k3 ,
− − 5.0 db
2N3906
− − 4.0 db
Switching Characteristics
Delay Time
Rise Time
Storage Time
2N3905
2N3906
td
tr
VIBC1C==1m3VA, VEB = 0.5V, IC = 10mA,
ts VIBC1C==IB32V=, I1Cm=A10mA,
− − 35 ns
− − 35 ns
− − 200 ns
− − 225 ns
Fall Time
2N3905
tf
− − 60 ns
2N3906
− − 75 ns
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.

विन्यास 3 पेज
डाउनलोड[ 2N3906 Datasheet.PDF ]


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