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2SC3320B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN triple diffusion planar transistor(High voltage switching transistor) - NELL SEMICONDUCTOR

भाग संख्या 2SC3320B
समारोह Silicon NPN triple diffusion planar transistor(High voltage switching transistor)
मैन्युफैक्चरर्स NELL SEMICONDUCTOR 
लोगो NELL SEMICONDUCTOR लोगो 
पूर्व दर्शन
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<?=2SC3320B?> डेटा पत्रक पीडीएफ

2SC3320B pdf
SEMICONDUCTOR
2SC3320B RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
CONDITIONS
VCEO
VCEO(SUS)*
Collector to emitter voltage
lCEO = 10mA
lC = 0.2A, L = 50mH
VCBO
Collector to base voltage
lCBO = 1mA
VEBO
Emitter to base voltage
lEBO = 1mA
ICBO
Collector cutoff current
VCBO = 500V, lE = 0
IEBO
Emitter cutoff current
VEBO = 7V, lC = 0
hFE Forward current transfer ratio
VCE = 5V, lC = 6A
VCE(sat)
Collector to emitter saturation voltage lC = 6A, lB = 1.2A
VBE(sat)
Base to emitter saturation voltage
lC = 6A, lB = 1.2A
ton Turn-on time
tstg Storage time
tf Fall time
lC = 7.5A, lB1 = 1.5A, lB2 = -3A
RL = 20Ω, PW = 20µs,
Duty ≤ 2%
MIN
400
500
7
10
MAX
UNIT
V
1
1
1
1.5
0.5
1.5
0.15
mA
V
µA
*VCEO(sus) Test circuit
50/60Hz
mercury relay
120W
6V
X
L 50mH
1W 15V
Y
G
Switching time test circuit
PW = 20µs
RL=20Ω
lB1 lC
lB2
lB1
lB2
0.9lC
0.1lC
lC
tON tSTG tF
www.nellsemi.com
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