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10N70Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 10A 700V N-CHANNEL POWER MOSFET - UNISONIC TECHNOLOGIES

भाग संख्या 10N70Z
समारोह 10A 700V N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स UNISONIC TECHNOLOGIES 
लोगो UNISONIC TECHNOLOGIES लोगो 
पूर्व दर्शन
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10N70Z pdf
10N70Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700
V
Gate-Source Voltage
VGSS ±20
V
Avalanche Current (Note 2)
IAR 10
A
Drain Current
Continuous I
Pulsed (Note 2)
D 10
IDM 40
A
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS 250
EAR 15.6
mJ
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
PD 50
W
Junction Temperature
TJ + 150 °C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25°C
4. ISD 9.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER SYMBOL
Junction to Ambient
Junction to Case
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-935,A

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