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10N65T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 10A 650V N-CHANNEL POWER MOSFET - UNISONIC TECHNOLOGIES

भाग संख्या 10N65T
समारोह 10A 650V N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स UNISONIC TECHNOLOGIES 
लोगो UNISONIC TECHNOLOGIES लोगो 
पूर्व दर्शन
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10N65T pdf
10N65T
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650
V
Gate-Source Voltage
VGSS ± 30 V
Avalanche Current (Note 2)
Drain Current
Continuous I
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR 10
D 10
IDM 38
EAS 90
EAR 15.6
dv/dt
4.5
A
A
A
mJ
mJ
V/ns
Power Dissipation
Junction Temperature
PD 50
W
TJ + 150 °C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 1.8mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25°C
4. ISD 9.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER SYMBOL
Junction to Ambient
Junction to Case
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-878.C

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