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DMN4060SVT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 45V N-CHANNEL ENHANCEMENT MODE MOSFET - DIODES

भाग संख्या DMN4060SVT
समारोह 45V N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स DIODES 
लोगो DIODES लोगो 
पूर्व दर्शन
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<?=DMN4060SVT?> डेटा पत्रक पीडीएफ

DMN4060SVT pdf
DMN4060SVT
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic S
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 5) VGS = 5V
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
ymbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
IAR
EAR
Value
45 V
±20 V
4.8
3.8
6.1
4.8
4.1
3.2
5.2
4.1
2.1 A
30 A
14.2 A
10 mJ
Units
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic S
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = 25°C
TA = 70°C
Steady state
t<10s
TA = 25°C
TA = 70°C
Steady state
t<10s
ymbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
0.75
106 °C/W
69
1.8
1.1
68 °C/W
44
20
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
100
80
60
Single Pulse
RθJA 7=2°C/W
Rθ=JθA(t) r(t) * R JA
TJ-A T = P * RθJA(t)
40
20
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
100
RDS(on)
10 Limited
PW = 01µs
DC
1
PW = 10s
PW =s1
PW = 100ms
PW = 10ms
0.1
PW =1ms
PW = 100µs
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
DMN4060SVT
Document number: DS35702 Rev. 2 - 2
2 of 7
www.diodes.com
February 2012
© Diodes Incorporated

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DMN4060SVT45V N-CHANNEL ENHANCEMENT MODE MOSFETDIODES
DIODES


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