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P4NB80FP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STP4NB80FP - STMicroelectronics

भाग संख्या P4NB80FP
समारोह STP4NB80FP
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=P4NB80FP?> डेटा पत्रक पीडीएफ

P4NB80FP pdf
STP4NB80/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.25
TO220-FP
3.6
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
www.DataSheet4U.coSmymbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
4
230
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
3
Max.
5
3.3
Unit
V
4A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
1.5
Typ.
2.9
Max.
Unit
S
700 920
95 126
9 12
pF
pF
pF
2/9

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डाउनलोड[ P4NB80FP Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
P4NB80FPSTP4NB80FPSTMicroelectronics
STMicroelectronics


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