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C4D40120D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D40120D
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C4D40120D?> डेटा पत्रक पीडीएफ

C4D40120D pdf
Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.2
35
65
99
1500
93
67
1.8
3
200
400
V
IF = 20 A TJ=25°C
IF = 20 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 20A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
28
μJ VR = 800 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
0.29**
0.57*
Unit
°C/W
Note
Fig. 9
Typical Performance (Per Leg)
40
35
30
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
25
20
15
10
5
0
0123
VF (V)
Figure 1. Forward Characteristics
4
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
500 1000
VR (V)
1500
Figure 2. Reverse Characteristics
2 C4D40120D Rev. G, 09-2016

विन्यास 6 पेज
डाउनलोड[ C4D40120D Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
C4D40120DSilicon Carbide Schottky DiodeCree
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