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C4D20120D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D20120D
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C4D20120D?> डेटा पत्रक पीडीएफ

C4D20120D pdf
Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
1.5
2.2
1.8
3
V
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
IR Reverse Current
35
65
200
400
μA
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
66
nC VdiR/d=t 1=202000V,AI/Fμ=s 10A
TJ = 25°C
C Total Capacitance
754
45
38
pF
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
* Per Leg, ** Per Device
Typical Performance (Per Leg)
2200
1188
1166
1144
1122
1100
88
66
44
22
00
00
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
00.5.5 11 11..55 22 22..55
VF FoVrwF FaorVdrwFVao(rlVtda)Vgeol(tVa)ge
Typ.
0.85*
0.43**
Max.
Unit
°C/W
33 33..55
0.0007070
0.0006060
0.0005050
0.0004040
0.0003030
0.0002020
0.0001010
00
00
Test Conditions
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
550000
11000000
15105000
VR RevVeRrRseVevVReo(rlstVaeg)Veo(ltVa)ge
Note
20200000
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C4D20120D Rev. B
Free Datasheet http://www.nDatasheet.com

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डाउनलोड[ C4D20120D Datasheet.PDF ]


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