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C4D15120A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D15120A
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=C4D15120A?> डेटा पत्रक पीडीएफ

C4D15120A pdf
Electrical Characteristics
Symbol Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Typ.
1.6
2.3
35
120
96
1200
70
50
Max.
1.8
3
200
300
Unit
V
μA
nC
pF
Test Conditions
IIFF
=
=
15
15
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
VdiR/d=t 1=202000V,AI/Fμ=s 15A
TJ = 25°C
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
1. Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
Typ.
0.78
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
30
25 TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
20
15
10
5
5
4
3
2
TTTJJJ===-275555°°°CCC
TJ =125°C
1 TJ =175°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
Figure 1. Forward Characteristics
0
200 400 600 800 1000 1200 1400 1600 1800
VR (V)
Figure 2. Reverse Characteristics
2 C4D15120A Rev. A
Free Datasheet http://www.nDatasheet.com

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डाउनलोड[ C4D15120A Datasheet.PDF ]


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C4D15120ASilicon Carbide Schottky DiodeCree
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