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C4D10120E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D10120E
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C4D10120E?> डेटा पत्रक पीडीएफ

C4D10120E pdf
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5 1.8
2.2 3
30 250
55 350
52
754
45
38
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 10A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
14.5
μJ VR = 800 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.9
Unit
°C/W
Note
Fig.9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
20
18 TJ=-55°C
16 TTTTJJJJ====27115527°°55CC°°CC
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
Figure 1. Forward Characteristics
5
4
3
TJ=-55°C
2 TTTTJJJJ====27115527°°55CC°°CC
1
0
0 500 1000 1500
VR (V)
Figure 2. Reverse Characteristics
2000
2 C4D10120E Rev. G, 01-2017

विन्यास 6 पेज
डाउनलोड[ C4D10120E Datasheet.PDF ]


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