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C4D08120E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D08120E
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C4D08120E?> डेटा पत्रक पीडीएफ

C4D08120E pdf
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5 1.8
2.2 3
35 250
100 350
37
560
37
27
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 8 A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
10.5
μJ VR = 800 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.1
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
15
14
13
12
11
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
10
9
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VF (V)
Figure 1. Forward Characteristics
500
450
400
350
300
250
200
150
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
100
50
0
0 200 400 600 800 1000 1200 1400 1600 1800
VR (V)
Figure 2. Reverse Characteristics
2 C4D08120E Rev. F, 01-2017

विन्यास 6 पेज
डाउनलोड[ C4D08120E Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
C4D08120ASilicon Carbide Schottky DiodeCree
Cree
C4D08120ESilicon Carbide Schottky DiodeCree
Cree


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