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C4D08120A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D08120A
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C4D08120A?> डेटा पत्रक पीडीएफ

C4D08120A pdf
Electrical Characteristics
Symbol Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Typ.
1.5
2.2
35
100
37
560
37
27
Max.
1.8
3
250
350
Unit
V
μA
nC
pF
Test Conditions
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 8 A
di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
1. Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
Typ.
1.26
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
14
TJ=-55°C
12 TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
Figure 1. Forward Characteristics
800
700
600
500
400
300 TJ=-55°C
TJ= 25°C
TJ= 75°C
200 TJ =125°C
TJ =175°C
100
0
0
500
1000
1500
VR (V)
Figure 2. Reverse Characteristics
2000
2 C4D08120A Rev. A
Free Datasheet http://www.nDatasheet.com

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डाउनलोड[ C4D08120A Datasheet.PDF ]


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