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C4D05120A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D05120A
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C4D05120A?> डेटा पत्रक पीडीएफ

C4D05120A pdf
Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
1.4
1.9
1.8
3
V
IIFF
=
=
5
5
A
A
TTJJ==2157°5C°C
IR Reverse Current
20
40
150
300
μA
VVRR
=
=
1200
1200
VV TTJJ==2157°5C°C
QC Total Capacitive Charge
27
nC
VdiR/d=t
800 V,
= 200
IAF/=μs5A
TJ = 25°C
C Total Capacitance
390
27
20
pF
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
Typ.
1.85
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
10
9
8
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3
VVolFta(geV(V))
Figure 1. Forward Characteristics
3.5
1000
900
800
700
600
500
400
300
200
100
0
0
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
500 1000
VR (VVol)tage (V)
1500
Figure 2. Reverse Characteristics
2000
2 C4D05120A Rev. A
Free Datasheet http://www.nDatasheet.com

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डाउनलोड[ C4D05120A Datasheet.PDF ]


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C4D05120ASilicon Carbide Schottky DiodeCree
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