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C4D02120E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D02120E
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=C4D02120E?> डेटा पत्रक पीडीएफ

C4D02120E pdf
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.4 1.8
1.9 3
V
IIFF
=
=
2
2
AA TTJJ==2157°5C°C
IR Reverse Current
10 50
40 150
μA
VVRR
=
=
1200
1200
VV TTJJ==2157°5C°C
QC Total Capacitive Charge
11
nC
VdiR/d=t
800 V,
= 200
IAF/=μs2A
TJ = 25°C
C Total Capacitance
167
11
8
pF
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC TO-252 Package Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Typical Performance
4
3.5 TTTJJJ===-275555°°°CCC
TJ =125°C
3 TJ =175°C
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3
VF (V)
Figure 1. Forward Characteristics
3.5
600
500
400
300
200
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
100
0
0
500 VR (V)1000
1500
Figure 2. Reverse Characteristics
2000
2 C4D02120E Rev. C
Free Datasheet http://www.nDatasheet.com

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डाउनलोड[ C4D02120E Datasheet.PDF ]


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