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C4D02120A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C4D02120A
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=C4D02120A?> डेटा पत्रक पीडीएफ

C4D02120A pdf
Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.4
1.9
10
40
11
167
11
8
1.8
3
50
150
V
IF = 2 A TJ=25°C
IF = 2 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 2A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
3.2
μJ VR = 800 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
2.5
Unit
°C/W
Note
Fig. 9
Typical Performance
4
TJ=-55°C
3.35 TTTTJJJJ====27115527°°55CC°°CC
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5
VF ForVwFa(rdVV)oltage
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
500 1000 1500
VR RevVeRrs(eVV)oltage (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C4D02120A Rev. E, 09-2016

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डाउनलोड[ C4D02120A Datasheet.PDF ]


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C4D02120ASilicon Carbide Schottky DiodeCree
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