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C3D25170H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C3D25170H
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=C3D25170H?> डेटा पत्रक पीडीएफ

C3D25170H pdf
Electrical Characteristics
Symbol
Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.8 2.5
3.2 4
V
IIFF
=
=
25
25
A
A
TTJJ==2157°5C°C
IR Reverse Current
20 100
100 400
μA
VVRR
=
=
1700
1700
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
230
nC VdiR/d=t 1=702000V,AI/Fμ=s 25 A
TJ = 25°C
C Total Capacitance
2079
187.5
97
pF
VVVRRR
=
=
=
0 V,
200
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Note
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.4
Unit
°C/W
Typical Performance
50
45
40
35
30
25
20 TTTJJJ===-275555°°°CCC
TJ =125°C
15 TJ =175°C
10
5
0
0123456
VF (V)
Figure 1. Forward Characteristics
7
8
7
6
5 TTTJJJ===-275555°°°CCC
TJ =125°C
4 TJ =175°C
3
2
1
0
0 200 400 600 800 1000 1200 1400 1600 1800 2000
VR (V)
Figure 2. Reverse Characteristics
2 C3D25170H Rev. -
Free Datasheet http://www.nDatasheet.com

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