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C3D10065I डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C3D10065I
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C3D10065I?> डेटा पत्रक पीडीएफ

C3D10065I pdf
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5 1.8
2.0 2.4
V
IIFF
=
=
10
10
AA TTJJ==2157°5C°C
IR Reverse Current
12 60
24 220
μA
VVRR
=
=
650
650
VV TTJJ==2157°5C°C
QC Total Capacitive Charge
25
nC
VdiR/d=t
650 V,
= 500
IAF/=μs10
A
TJ = 25°C
C Total Capacitance
480
50
42
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Package Thermal Resistance from Junction to Case
Typ.
2.6
Unit
°C/W
Note
Typical Performance
20
18
16
14
TTTTTJJJJJ=====271-1555275°°55°CC°°CCC
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
VF (V)
Figure 1. Forward Characteristics
3.5
12
10
8
6
4
2
TTTTTJJJJJ=====271-1555275°°55°CC°°CCC
0
0 100 200 300 400 500 600 700 800
VVoRltage((VV) )
Figure 2. Reverse Characteristics
2 C3D10065I Rev. B
Free Datasheet http://www.nDatasheet.com

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डाउनलोड[ C3D10065I Datasheet.PDF ]


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