# C3D16060D डेटा पत्रक PDF( Datasheet डाउनलोड )

## डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

 भाग संख्या C3D16060D समारोह Silicon Carbide Schottky Diode मैन्युफैक्चरर्स Cree लोगो पूर्व दर्शन 1 Page ``` Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage IR Reverse Current 1.6 1.8 1.9 2.4 V 10 20 50 200 μA QC Total Capacitive Charge 21 nC C Total Capacitance 441 39 pF 33 Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. IIFF = = 8 8 A A TTJJ==2157°5C°C VVRR = = 600 600 V V TTJJ==2157°5C°C VdiR/d=t 600 V, = 500 IAF/=μs8A TJ = 25°C VVVRRR = = = 0 V, 200 400 TV,J V, = TTJJ 25°C, f = 1 MHz = 25˚C, f = 1 MHz = 25˚C, f = 1 MHz Thermal Characteristics Note Symbol Parameter RθJC Thermal Resistance from Junction to Case * Per Leg, ** Per Device Typ. 1.5 * 0.75 ** Unit °C/W Typical PerformanFcorewar(dPChearracLteerisgtic)s 1010 99 TJ = 25°C TJ = 75°C 88 TJ = 125°C TJ = 175°C 77 66 55 44 33 22 11 00 00..00 00..55 11..00 11..55 22..00 2.2.55 VF ForwVaF FrodrwVarodlVtoaltgagee ((VV) ) Figure 1. Forward Characteristics Reverse Characteristics 101000 9090 8080 7070 6060 5050 4040 TJ = 25°C TJ = 75°C 3030 TJ = 125°C 2020 TJ = 175°C 1010 00 00 110000 202000 303000 404000 550000 660000 770000 808000 909000 10100000 VR RVeRvReervseerseVVoolttaagge e(V)(V) Figure 2. Reverse Characteristics 2 C3D16060D Rev. A Free Datasheet http://www.nDatasheet.com ``` विन्यास 6 पेज डाउनलोड [ C3D16060D Datasheet.PDF ]

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 भाग संख्या विवरण विनिर्माण C3D16060D Silicon Carbide Schottky Diode Cree

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