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C3D10060G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C3D10060G
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=C3D10060G?> डेटा पत्रक पीडीएफ

C3D10060G pdf
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5
2.0
1.8
2.4
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
IR Reverse Current
10
20
50
200
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
VR = 600 V, IF = 10 A
QC Total Capacitive Charge 25 nC di/dt = 500 A/μs
TJ = 25°C
C Total Capacitance
480 VR = 0 V, TJ = 25°C, f = 1 MHz
50 pF VR = 200 V, TJ = 25˚C, f = 1 MHz
42 VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.2
Unit
°C/W
Typical Performance
Note
20
18
TJ = 25°C
16 TJ = 75°C
TJ = 125°C
14 TJ = 175°C
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF Forward Voltage (V)
Figure 1. Forward Characteristics
100
90
80
70
60
50
40
30 TJ = 25°C
TJ = 75°C
20 TJ = 125°C
10 TJ = 175°C
0
0 100 200 300 400 500 600 700 800 900
VR Reverse Voltage (V)
Figure 2. Reverse Characteristics
2 C3D10060G Rev. E
Free Datasheet http://www.nDatasheet.com

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