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C3D10060A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C3D10060A
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=C3D10060A?> डेटा पत्रक पीडीएफ

C3D10060A pdf
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5
2.0
1.8
2.4
V
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
IR Reverse Current
10
20
50
200
μA
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
25
nC
VdiR/d=t
600 V,
= 500
IAF/=μs10
A
TJ = 25°C
C Total Capacitance
480
50
42
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f =
= 25˚C, f
= 25˚C, f
1 MHz
= 1 MHz
= 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.1
Unit
°C/W
Typical Performance
Note
20
18
16
14
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF Forward Voltage (V)
Figure 1. Forward Characteristics
110000
90
90
80
80
70
6700
TJ = 25°C
5600 TJ = 75°C
4500 TJ = 125°C
30
TTJJ
=
=
175°C
25°C
40 TJ = 75°C
20 TJ = 125°C
30
10
TJ = 175°C
0200 100 200 300 400 500 600 700 800 900
10 VR Reverse Voltage (V)
0
0 Fi1g0u0re 22. 0R0ever3s0e0 Cha40ra0cter5is0t0ics 600
VR Reverse Voltage (V)
700
2 C3D10060A Rev. C
Free Datasheet http://www.nDatasheet.com

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डाउनलोड[ C3D10060A Datasheet.PDF ]


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