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CCS050M12CM2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - All-Silicon Carbide Six-Pack (Three Phase) Module - Cree

भाग संख्या CCS050M12CM2
समारोह All-Silicon Carbide Six-Pack (Three Phase) Module
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=CCS050M12CM2?> डेटा पत्रक पीडीएफ

CCS050M12CM2 pdf
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS Drain - Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
1.2
2.3
1.6
kV VGS, = 0 V, ID = 250 µA
V VD = VG, ID = 2.5 mA
VDS = 10 V, ID = 2.5 mA, TJ = 150 ˚C
2
250
μA VDS = 1.2 kV, VGS = 0V
IGSS Gate-Source Leakage Current
RDS(on) On State Resistance
gfs Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
25
43
22
21
2.810
0.393
0.014
100
36
63
nA
mΩ
S
VGS = 25 V, VDS = 0V
VGS = 20 V, IDS = 50 A
VGS = 20 V, IDS = 50 A, TJ = 150 ˚C
VDS = 20 V, IDS = 50 A
VDS = 20 V, ID = 50 A, TJ = 150 ˚C
Figs.
4-7
Fig. 8
nF
VDS = 800 V, VGS = 0 V
f = 1 MHz, VAC = 25 mV
Figs.
16,17
Eon Turn-On Switching Energy
EOff Turn-Off Switching Energy
1.1
mJ
VDD = 600 V, VGS = +20V/-5V
ID = 50 A, RG = 20 Ω
Load = 200 μH TJ = 150 ˚C
Fig. 18
0.6 mJ Note: IEC 60747-8-4 Definitions
RG (int)
QGS
QGD
QG
Internal Gate Resistance
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
1.5
32
30
180
Ω f = 1 MHz, VAC = 25 mV
nC VDD= 800 V, ID= 50 A
Fig. 15
td(on)
tr
td(off)
tf
VSD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode Forward Voltage
21 ns VDD = 800V, RLOAD = 8 Ω
30
ns VGS = +20/-2V, RG = 3.8 Ω
Figs.
50 ns TJ = 25 ˚C
20-25
Note: IEC 60747-8-4 Definitions
19 ns
1.5 1.8 V IF = 50 A, VGS = 0
2.0 2.3
IF = 50 A, TJ = 150 ˚C
Figs.
10-11
QC Total Capacitive Charge
0.28
μC
Thermal Characteristics
Symbol
Parameter
RthJCM
RthJCD
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
Min.
Typ.
0.37
0.42
Max.
0.40
0.43
Unit
˚C/W
Test Conditions
Tc = 90 ˚C, PD = 150 W
Tc = 90 ˚C, PD = 130 W
Note
NTC Characteristics
Symbol
Condition
R25
Delta R/R
P25
TC = 25 °C
TC = 100 °C, R100 = 481 Ω
TC = 25 °C
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298.15K))]
Typ.
5
3380
Max.
±5
Unit
%
mW
K
Additional Module Data
Symbol
W
M
Weight
Mounting Torque
Condition
Max
180
5
Unit
g
Nm
Test Condition
To heatsink
2 CCS050M12CM2,Rev. E

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