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J649 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SJ649 - NEC

भाग संख्या J649
समारोह 2SJ649
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=J649?> डेटा पत्रक पीडीएफ

J649 pdf
2SJ649
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Condtions
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
VDS = –60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –10 A
VGS = –10 V, ID = –10 A
RDS(on)2 VGS = –4.0 V, ID = –10 A
Input Capacitance
Ciss VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –30 V, ID = –10 A
Rise Time
tr VGS = –10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG VDD = –48 V
Gate to Source Charge
QGS VGS = –10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = –20 A
IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr IF = 20 A, VGS = 0 V
Reverse Recovery Charge
Qrr
Note Pulsed: PW 350 µs, Duty Cycle 2%
di/dt = 100 A/µs
MIN. TYP. MAX.
10
m 10
–1.5 –2.0 –2.5
10 20
38 48
47 75
1900
350
140
10
10
73
17
38
7
10
0.95
49
100
Unit
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG
VGS = –20 0 V
50
L
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS ()
VGS
Wave Form
0 10%
VDS ()
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
10% 10%
90%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16332EJ1V0DS
Free Datasheet http://www.datasheet4u.net/

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डाउनलोड[ J649 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
J649 2SJ649NEC
NEC


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