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BD637 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Power Transistor - Inchange Semiconductor

भाग संख्या BD637
समारोह Silicon NPN Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
पूर्व दर्शन
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<?=BD637?> डेटा पत्रक पीडीएफ

BD637 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD637
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 2V
ICES Collector Cutoff Current
VCE= 100V; VBE= 0
hFE-1
DC Current Gain
IC= 25mA; VCE= 2V
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
MIN MAX UNIT
80 V
100 V
5V
0.6 V
1.3 V
0.2 mA
40
25
isc Websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet4u.com/

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डाउनलोड[ BD637 Datasheet.PDF ]


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