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UT40N04 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR - UTC

भाग संख्या UT40N04
समारोह N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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UT40N04 pdf
UT40N04
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Current
TC=25°C
TC=70°C
VDS
VGS
ID
IDM
IAS
40 V
±20 V
25
20
75
A
27
Avalanche Energy
Power Dissipation
L=0.1mH
TC=25°C
TC=70°C
EAS
PD
37 mJ
30
20
W
Operating Junction Temperature
TJ
Storage Temperature
TSTG
Note:1. Pulse width limited by maximum junction temperature.
-55~150
-55~150
°C
°C
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
40
4.1
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
On-State Drain Current (Note 1)
BVDSS
IDSS
IGSS
ID(ON)
ID=250µA, VGS=0V
VDS=32V, VGS=0V
VDS=30V, VGS=0V, TJ=125°C
VDS=0V, VGS=±20V
VDS=5V, VGS=10V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note 1)
Forward Transconductance (Note 1)
Gate Resistance
VGS(TH)
RDS(ON)
gFS
Rg
VDS=VGS, ID=250µA
VGS=5V, ID=8A
VGS=7V, ID=8A
VGS=10V, ID=10A
VDS=5V, ID=10A
VGS=0V, VDS=0V, f=1.0MHz
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
CISS
COSS
CRSS
VGS=0V, VDS=20V, f=1.0MHz
QG (VGS=10V)
QG (VGS=4.5V)
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=0.5V(BR)DSS, ID=10A
VGS=10V, VDS=20V, ID-1A,
RGS=6, RL=1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Drain-Source Diode Forward Voltage
(Note 1)
VSD IF=10A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
IF=10A, dIF/dt=100A/µs
Note: 1. Pulsde test: Pulse width 300µsec, duty cycle 2%.
2. Independent of Operating Temperature.
MIN TYP MAX UNIT
40 V
1
10
µA
±250 nA
75 A
2 2.4 3
26 50
22 45
19 29
30
1.55
V
m
S
1150
157
80
pF
19
9 nC
4.5
3
10 ns
6 ns
26 ns
6 ns
23 A
1.3 V
38 ns
29 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-467.a
Free Datasheet http://www.datasheet4u.com/

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