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2N4449U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON SWITCHING TRANSISTOR - Microsemi Corporation

भाग संख्या 2N4449U
समारोह NPN SILICON SWITCHING TRANSISTOR
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
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2N4449U pdf
2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Emitter Cutoff Current
VCE = 20 Vdc
Emitter-Base Breakdown Voltage
V(BR)CEO
ICES
VEB = 4.5 Vdc
Emitter-Base Cutoff Current
IEBO
VEB = 4.0 Vdc
Collector-Base Breakdown Voltage
VCB = 40 Vdc
Collector-Base Cutoff Current
ICBO
VCB = 32 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 0.35 Vdc
IC = 30 mAdc, VCE = 0.4 Vdc
IC = 10 mAdc, VCE = 1.0 Vdc
hFE
IC = 100 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
Base-Emitter Saturation Voltage
VCE(sat)
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
VBE(sat)
IC = 100 mAdc, IB = 10 mAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
(1)Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
hfe
Cobo
Cibo
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc
Turn-Off Time
IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc
Charge Storage Time
IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc
ton
toff
ts
Min.
15
40
30
40
20
0.70
0.80
5.0
Max.
0.4
10
0.25
10
0.2
120
120
120
120
0.20
0.25
0.45
0.85
0.90
1.20
10
4.0
5.0
12
18
13
Unit
Vdc
µAdc
µAdc
µAdc
Vdc
Vdc
pF
pF
ηs
ηs
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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