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2N3905 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Si-Epitaxial PlanarTransistors - Diotec Semiconductor

भाग संख्या 2N3905
समारोह Si-Epitaxial PlanarTransistors
मैन्युफैक्चरर्स Diotec Semiconductor 
लोगो Diotec Semiconductor लोगो 
पूर्व दर्शन
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<?=2N3905?> डेटा पत्रक पीडीएफ

2N3905 pdf
General Purpose Transistors
2N3905, 2N3906
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 0.1 mA
- VCE = 1 V, - IC = 1 mA
- VCE = 1 V, - IC = 10 mA
- VCE = 1 V, - IC = 50 mA
- VCE = 1 V, - IC = 100 mA
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 10 mA,
f = 100 MHz
2N3905
2N3906
fT
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 100 kHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 100 kHz
CEB0
Noise figure – Rauschzahl
- VCE
RG =
= 5 V,
1 kS f
- IC = 100 :A
= 10 Hz ...15.7
kHz
2N3905
2N3906
F
F
Switching times – Schaltzeiten
turn-on time
turn-off time
ICon = 10 mA,
IBon = - IBoff = 1 mA
ton
toff
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
30 –
60 –
40 –
80 –
50 – 150
100 – 300
30 –
60 –
15 –
30 –
200 MHz
250 MHz
– – 4.5 pF
– – 10 pF
– – 5 dB
– – 4 dB
– – 70
– – 300
RthA 200 K/W 1)
2N3903, 2N3904
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
33

विन्यास 2 पेज
डाउनलोड[ 2N3905 Datasheet.PDF ]


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