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2N3055 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN POWER SILICON TRANSISTOR - Microsemi Corporation

भाग संख्या 2N3055
समारोह NPN POWER SILICON TRANSISTOR
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
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<?=2N3055?> डेटा पत्रक पीडीएफ

2N3055 pdf
2N3055 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min. Max.
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 4.0 Vdc
IC = 4.0 Adc, VCE = 4.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 4.0 Adc, IB = 0.4 Adc
IC = 10 Adc, IB = 3.3 Adc
Base-Emitter Saturation Voltage
IC = 4.0 Adc, VCE = 4.0 Vdc
hFE
VCE(sat)
VBE(sat)
40
20 60
5.0
0.75
2.0
1.4
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 4.0 Adc, VCE = 4.0 Vdc, f = 100 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
hfe
Cobo
8.0 40
700
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 4.0 Adc; IB1= 0.4 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 4.0 Adc; IB1 = -IB2 = 0.4 Adc
ton 6.0
toff 12
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 7.8 Vdc, IC = 15 Adc
Test 2
VCE = 70 Vdc, IC = 1.67 Adc
Switching Tests
TA = +250C; duty cycle 10%; RS 0.1
Test 1
tP = 5.0 ms; RBB1 = 2.0 ; VBB1 10 Vdc; RBB2 = 100 ; VCC 10 Vdc; VBB2 = 1.5 Vdc; IC = 15 Adc
Test 2
tP = 20 ms; RBB1 = 30 ; VBB1 10 Vdc; RBB2 = 100 ; VCC 10 Vdc; VBB2 = 1.5 Vdc; IC = 3.8 Adc
Unit
Vdc
Vdc
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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