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FDMC8030 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel Power MOSFET - Fairchild Semiconductor

भाग संख्या FDMC8030
समारोह Dual N-Channel Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC8030?> डेटा पत्रक पीडीएफ

FDMC8030 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
19 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 12 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 3.2 V, ID = 4 A
VGS = 10 V, ID = 12 A
TJ = 125 °C
VDD = 5 V, ID = 12 A
1.0 1.5 2.8
V
-5 mV/°C
8 10
10 14
19 28 mΩ
13 16
57 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20 V, VGS = 0 V
f = 1MHz
1462
321
20
0.9
1975
430
30
2.5
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 20 V, ID = 12 A
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 20 V
ID = 12 A
7 13 ns
3 10 ns
19 33 ns
3 10 ns
21 30 nC
12 17 nC
2.8 nC
2.5 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 12 A
(Note 2)
0.83 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 12 A, di/dt = 100 A/μs
25 40 ns
9 18 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 65 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.155 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 21 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 12 A, VDD = 36 V, VGS = 10 V. 100% tested at L = 3 mH, IAS = 5 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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