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N0600N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOS FIELD EFFECT TRANSISTOR - Renesas

भाग संख्या N0600N
समारोह MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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N0600N pdf
N0600N
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min
1.5
4
Typ
2.0
17.5
22.3
1380
186
109
5.7
6.3
33.2
3.9
29.8
4.2
9.0
0.92
30
39.6
Max
1
±100
2.5
25
36
1.5
Chapter Title
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 15 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 15 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 30 A
IF = 30A, VGS = 0 V
IF = 30 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
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