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2SA1485 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Epitaxial Transistor - Hitachi Semiconductor

भाग संख्या 2SA1485
समारोह Silicon PNP Epitaxial Transistor
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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2SA1485 pdf
2SA1485
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–200
–200
–5
–100
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
–200
Collector to emitter breakdown V(BR)CEO
voltage
–200
Emitter to base breakdown
voltage
V(BR)EBO
–5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CEO
hFE
VCE(sat)
100
Base to emitter voltage
Note: 1. Pulse test
VBE
Typ
Max Unit
—V
—V
—V
–500
250
–0.5
µA
V
–1.0 V
Test conditions
IC = –10 µA, IE = 0
IC = –0.5 mA, RBE =
IE = –10 µA, IC = 0
VCE = –200 V, RBE =
VCE = –12 V, IC = –2 mA*1
IC = –30 mA, IB = –3 mA*1
VCE = –12 V, IC = –2 mA*1
2

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