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2SA1468 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Epitaxial Transistor - Hitachi Semiconductor

भाग संख्या 2SA1468
समारोह Silicon PNP Epitaxial Transistor
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=2SA1468?> डेटा पत्रक पीडीएफ

2SA1468 pdf
2SA1468
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–180
–180
–5
–100
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
–180
Collector to emitter breakdown V(BR)CEO
voltage
–180
Emitter to base breakdown
voltage
V(BR)EBO
–5
DC current transfer ratio
hFE*1
100 —
Collector to emitter saturation VCE(sat)
voltage
Base to emitter voltage
VBE — —
Gain bandwidth product
fT
— 200
Collector output capacitance Cob — 3.5
Notes: 1. The 2SA1468 is grouped by hFE as follows.
2. Pulse test
Grade
B
C
Mark
INB
INC
hFE 100 to 200 160 to 320
Max Unit Test conditions
—V
IC = –10 µA, IE = 0
—V
IC = –0.5 mA, RBE =
—V
IE = –10 µA, IC = 0
320
–0.5 V
VCE = –12 V, IC = –2 mA*2
IC = –30 mA, IB = –3 mA*2
–1.0
V
MHz
pF
VCE = –12 V, IC = –2 mA
VCE = –12 V, IC = –10 mA
VCB = –10 V, IE = 0, f = 1 MHz
2

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डाउनलोड[ 2SA1468 Datasheet.PDF ]


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