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2SA1255 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON PNP TRIPLE DIFFUSED TRANSISTOR - Toshiba Semiconductor

भाग संख्या 2SA1255
समारोह SILICON PNP TRIPLE DIFFUSED TRANSISTOR
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=2SA1255?> डेटा पत्रक पीडीएफ

2SA1255 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
ICBO
VCB = −200 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CBO IC = −0.1 mA, IE = 0
V (BR) CEO IC = −1 mA, IB = 0
hFE
(Note)
VCE = −3 V, IC = −10 mA
VCE (sat) IC = −10 mA, IB = −1 mA
VBE (sat) IC = −10 mA, IB = −1 mA
fT VCE = −10 V, IC = −2 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
ton VCC = −50 V, IC = −6 mA
tstg
IB1 = IB2 = 0.6 mA
Pulse width = 5 μs
tf Duty cycle <= 2%
Note: hFE classification O: 70~140, Y: 120~240
2SA1255
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
200
V
200
V
70 240
⎯ −0.2 1
V
⎯ −0.75 1.5
V
50 100 MHz
3
7 pF
0.3
2 ⎯ μs
0.4
2 2007-11-01

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डाउनलोड[ 2SA1255 Datasheet.PDF ]


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