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2SA1225 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Epitaxial Type Transistor - Toshiba Semiconductor

भाग संख्या 2SA1225
समारोह Silicon PNP Epitaxial Type Transistor
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=2SA1225?> डेटा पत्रक पीडीएफ

2SA1225 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 160 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 100 mA
VCE (sat)
VBE
fT
Cob
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
VCE = 10 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note1: hFE classification O: 70 to 140, Y: 120 to 240
Marking
2SA1225
Min Typ. Max Unit
― ― −1.0 μA
― ― −1.0 μA
160
V
5 ― ―
V
70 240
― ― −1.5 V
― ― −1.0 V
100 MHz
30 pF
A1225
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical
and electronic equipment.
2 2013-11-01

विन्यास 4 पेज
डाउनलोड[ 2SA1225 Datasheet.PDF ]


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