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74LVC1G125 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Bus buffer/line driver - NXP Semiconductors

भाग संख्या 74LVC1G125
समारोह Bus buffer/line driver
मैन्युफैक्चरर्स NXP Semiconductors 
लोगो NXP Semiconductors लोगो 
पूर्व दर्शन
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<?=74LVC1G125?> डेटा पत्रक पीडीएफ

74LVC1G125 pdf
Philips Semiconductors
Bus buffer/line driver; 3-state
Product specification
74LVC1G125
FEATURES
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
– JESD8B/JESD36 (2.7 V to 3.6 V).
• ±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 °C to +85 °C and 40 °C to +125 °C.
DESCRIPTION
The 74LVC1G125 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
The input can be driven from either 3.3 V or 5 V devices.
This feature allows the use of this device in a mixed
3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC1G125 provides one non-inverting buffer/line
driver with 3-state output. The 3-state output is controlled
by the output enable input (OE). A HIGH level at pin OE
causes the output to assume a high-impedance
OFF-state.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf 2.5 ns.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL UNIT
tPHL/tPLH
CI
CPD
propagation delay input A to output Y
input capacitance
power dissipation capacitance per buffer
VCC = 1.8 V; CL = 30 pF; RL = 1 k
VCC = 2.5 V; CL = 30 pF; RL = 500
VCC = 2.7 V; CL = 50 pF; RL = 500
VCC = 3.3 V; CL = 50 pF; RL = 500
VCC = 5.0 V; CL = 50 pF; RL = 500
output enabled; notes 1 and 2
output disabled; notes 1 and 2
3.3
2.2
2.5
2.1
1.7
5
25
6
ns
ns
ns
ns
ns
pF
pF
pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
2004 Sep 15
2

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डाउनलोड[ 74LVC1G125 Datasheet.PDF ]


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