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2N3055 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Darlingtons - Comset Semiconductor

भाग संख्या 2N3055
समारोह NPN Silicon Darlingtons
मैन्युफैक्चरर्स Comset Semiconductor 
लोगो Comset Semiconductor लोगो 
पूर्व दर्शन
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<?=2N3055?> डेटा पत्रक पीडीएफ

2N3055 pdf
2N3055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
BVCER
Collector-Emitter Sustaining Voltage
(*)
Collector-Emitter Breakdown
Voltage (*)
IC=200 mA, IB=0
IC=200 mA, RBE=100
ICEO Collector-Emitter Current
CVE=30 V, IB=0
ICEX Collector Cutoff Current
VCE=100 V, VEB(off)=1.5 V
IEBO Emitter Cutoff Current
VBE=7.0 V, IC=0
hFE DC Current Gain
IC=4.0 A, IB=4.0 Adc
VCE(SAT) Collector-Emitter saturation Voltage IC=4.0 A, IB=0.4 2Adc
VBE Base-Emitter Voltage
hfe Small Signal Current Gain
fαe
Small Signal Current Gain Cutoff
Frequency
VCER(SUS) Collector-Emitter Sustaining Voltage
Is/b
Second Breakdown Collector
Current
In accordance with JEDEC Registration Data
(*) Pulse Width 300 µs, Duty Cycle 2.0%
IC=4.0 A, VCE=4.0 V
VCE=4.0 V, IC=1.0 A
f=1.0 kHz
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VCE=4.0 V, IC=1.0 A
f=1.0 kHz
IC=0.2 A, IB=0 A
RBE= 100
t=1 S (non repetitive)
Min Typ Max Unit
60 - - V
70 - - V
- - 0.7 MA
- - 5.0 mA
- - 5.0 mA
20 - 70
- - 1.1 V
- 1.8 -
V
15 - 120 -
10 -
- kHz
60 - - V
1.95 - - A
31/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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डाउनलोड[ 2N3055 Datasheet.PDF ]


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