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P7N80C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FQP7N80C - Fairchild Semiconductor

भाग संख्या P7N80C
समारोह FQP7N80C
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=P7N80C?> डेटा पत्रक पीडीएफ

P7N80C pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
800 --
ID = 250 µA, Referenced to 25°C -- 0.93
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.3 A
VDS = 50 V, ID = 3.3 A
(Note 4)
3.0
--
--
--
1.57
5.5
5.0
1.9
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1290 1680
-- 120 155
-- 10
13
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 6.6 A,
RG = 25
www.DataSheet.net/
(Note 4, 5)
VDS = 640 V, ID = 6.6 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
35
100
50
60
27
8.2
11
80
210
110
130
35
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.6 A
trr Reverse Recovery Time
VGS = 0 V, IS = 6.6 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 6.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 6.6
-- 26.4
-- 1.4
650 --
7.0 --
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Datasheet pdf - http://www.DataSheet4U.co.kr/

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डाउनलोड[ P7N80C Datasheet.PDF ]


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