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WSB1151 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP EPITAXIAL SILICON TRANSISTOR - Wooseok

भाग संख्या WSB1151
समारोह PNP EPITAXIAL SILICON TRANSISTOR
मैन्युफैक्चरर्स Wooseok 
लोगो Wooseok लोगो 
पूर्व दर्शन
1 Page
		
<?=WSB1151?> डेटा पत्रक पीडीएफ

WSB1151 pdf
WSB1151
Static Characteristics
-12
-10 IB=-200mA
DC Current Gain
1000
VCE=-2V
300
IB=-100mA
-8 100
IB=-60mA
-6
30
IB=-30mA
-4
IB=-20mA
10
-2 IB=-10mA
0
-0.4 -0.8 -1.2 -1.6
-2.0
Vce,Collector-Emitter Voltage ,V
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
IC=10IB
-1000
VBE(sat)
-100
VCE(sat)
-10
-0.01 -0.03
-0.1 -0.3 -1
IC,Collector Current ,A
-3 -10
Current Gain-Bandwidth Product
1000
300
- 100
50
VCE=-5V
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30
10
-1 -10 -100 -1000 -2000
IC,Collector Current,mA
Power Derating
30
20
15
10
5
1
-0.01
-0.1 -1
IC,Collector Current,A
-2
-10 Safe Operating Area
Ic Max(Pulse)
1mS 100uS
-3 10mS
Ic Max(DC)
-1
-0.3
-0.1
50 100
150 200
Tc(), Case Temperature
250
-0.01
-1
-3
-10 -30
-100 -300 -1000
VCE(V),Collector Emitter Voltage
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
2
Datasheet pdf - http://www.DataSheet4U.co.kr/

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डाउनलोड[ WSB1151 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
WSB1151PNP EPITAXIAL SILICON TRANSISTORWooseok
Wooseok


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