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2N6075B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Sensitive Gate Triacs - ON Semiconductor

भाग संख्या 2N6075B
समारोह Sensitive Gate Triacs
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=2N6075B?> डेटा पत्रक पीडीएफ

2N6075B pdf
2N6071A/B Series
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RθJC
RθJA
TL
Max
3.5
75
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Max Unit
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
"*Peak On-State Voltage(1)
(ITM = 6 A Peak)
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C)
All Quadrants
IDRM,
IRRM
VTM
VGT
— — 10 µA
——
2 mA
——
2 Volts
Volts
— 1.4 2.5
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
All Quadrants
VGD
0.2 —
Volts
*Holding Current
"(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 1 Adc)
Turn-On Time
(ITM = 14 Adc, IGT = 100 mAdc)
(TJ = –40°C)
(TJ = 25°C)
IH
tgt
mA
— — 30
— — 15
— 1.5 — µs
QUADRANT
(Maximum Value)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
Type
2N6071A
2N6073A
2N6075A
IGT
@ TJ
+25°C
–40°C
I II III IV
mA mA mA mA
5 5 5 10
20 20 20 30
2N6071B
2N6073B
2N6075B
+25°C
–40°C
3 335
15 15 15 20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt(c)
— 5 — V/µs
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